AIX G5 WW SiC Planetary Reactor for deposition on 8 x150 mm ( 10 x100 mm ) wafers
2014 model, system equipped with EpiCurve TT and 2 Ebara ESA80W-HDF Dry Pump.
MOCVD system for 1600℃
Configuration:
1. MO-G2-D Double Standard Gas Channel x3
2 x SiH4 : 2 x RunCenter
2 x C3H8 : 1 x RunCenter , 1 x RunBottom
2 x HCl : 2 x RunHCl
2. MO-G2/G4-D Combined standard and dilution/dopant gas channel x 1
2 x N2 : 2 x Center
3. MO-G2 Standard gas channel with pusher, for low flow x 1
1 x Cl2H2Si
4. MO-G6 Dummy Line x 1
1 x Center
5. MO-differential run/vent pressure balancing
1 x Center
More information available on request.