Aixtron AIX G5 WW C SiC (8 x150 mm)

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Configuration:
AIX G5 WW C (SiC) Planetary Reactor for deposition on 8 x150 mm wafers , 2022 model MOCVD system with automated wafer transfer module, 1 Epison 5 and EpiCurve TT® AR 3W.

Gas Distribution Confirgured as follows:
Hydride Lines : C3H8 x 3 , HCl x 1, NN x 1,
MO Source / Dopant Lines : TCS x 1, TMAl x 2,

- Best performance for Next Generation SiC Power Electronics
- High throughput batch epitaxy with single wafer control - combining best of both worlds.

Key Benefits
-Best in class throughput and lowest cost of ownership per wafer
-Single wafer performance in batch configuration for excellent epitaxial layer quality
-Si fab compatible automation supports SiC power market ramp-up

Product Features
-Planetary reactor with hot wafer transfer
-Efficient gas utilization in growth chamber
-Wafer level temperature control
-Cassette-to-cassette wafer handling
 
Fast epitaxial processing 
-8x150 mm configuration with single wafer rotation
-AutoSat feature for within batch uniformity
-SECS-GEM factory interface

More information available on request.