Aixtron Crius I, 5x4'' (3x6'') IC GaN

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Crius I, 5x4'' (3x6'') (31x2'') IC, GaN MOCVD System

System equipped with Laytec EpiTT (905mm/405nm) In-situ Monitor, Ebara ESA70W-D Dry Pump, 1 Chiller Heat Exchanger, 6 RM6s Lauda and 1 RM25s Lauda chiller.

Hydride Source Lines : NH3 x 2, Dummy x1
Dopant Lines : SiH4/H2 (200ppm) x 1
MO_1 Source Lines : TMGa x 2, TMAl x 1, Cp2Mg x 2, Dummy x1
MO_2 Source Lines : TMIn x 2, Cp2Eu x1, Dummy x1

More information available on request.