Aixtron 2800G4 ICHT GaAs/InP

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Aixtron 2800G4 ICHT 11x4'' GaN , 2011 model converted to GaAs or InP based MOCVD system w/EpiTT.

 

Hydride Lines - AsH3_1 - 1000/1000, AsH3_2 - 1000/1000 , PH3_1 - 1000/1000, PH3_2 - 1000/1000,

Dopant Lines - Si2H6_1 - 200/1000, Si2H6_2 with dilution 100/1000/200

 

Gas Distribution system confirgured as follows:

MO 1 - TMGa_1, 500/1000

MO 2 - TMGa_2, 100/1000

MO 3 - TMAl_1, 500/1000

MO 4 - TMAl_2, 200/1000

MO 5 - TMIn_1, 1000/1000

MO 6 - TMIn_2, 1000/1000

MO 7 - DMZn_1 200/1000

MO 8 - CBr4_1, 200/1000 

 

Equipped with (5) RM 6S and (1) RM 25Sthermal baths

 

More information available on request.