Reactive Ion Etching System
RIE-10NR is a low-cost, high-performance, fully automatic, dry etching system that meets the most demanding process requirements using fluorine chemistry. A computerized touch panel provides user-friendly interface for parameter control and recipe storage.
Etching is performed with minimum sidewall deterioration and a high selectivity between materials. With its sleek, compact design, the RIE-10NR system requires minimal clean room space.
-Highly selective anisotropic etching
-Fully automatic "one-button" operation with full manual override
-Easy-to-use computerized touch panel for parameter control, recipe entry and storage
-Process wafers up to ø8" in diameter
-Sleek, compact design uses minimal clean room space
Stripping of passivation materials including silicon nitride, silicon dioxide and silicon oxynitride
Anisotropic etching of all types of silicon-based films, compound semiconductors and refractory metals including Si, SiO2, Poly-Si, Si3N4, GaAs and Mo Manufacturing of micromachines
Failure analysis
Dimensions:
Main Unit: 500(W) x 920(D) x 1510(H) mm
Unit: 522(W) x 163(D) x 216(H) mm
More information available on request.