PREMTEK - RTP-681A Rapid Thermal Process System

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Application:

●Materials for Si、Ge、Si/Ge、 GaAs、 InP、 GaN…etc.

●Nano & shallow junction devices

●LD and blue LED

●DWDM, AWG

●Implant anneal/activation

●Metal alloy, GaAs contact alloy

●PSG/BPSG re-flow

●Trench oxidation

●Poly-Si Annealing

●Gate dielectric formation

●Ti Silicide/Salicide/Nitride

 

Specifications

●Wafer Size：Chip size or 2”~ 8”

●Temperature Range：RT ~ 1250℃

●Temperature Ramp Up Rate： ≦100℃/sec (Bare Wafer)

●Temperature Uniformity： ±1%

●Process chamber oxygen content：≧2ppm

●Process Pressure： 10m Torr ~ 1 atm (Option)

 

Machine size : W150cm xL160cm xH205cm

Weight : 800 Kg

Facility Electricity : 220V-400A 3P / 3W 60Hz

Cooling water (inlet) : 18-25 C (temperature), 3-5Kg/cm2(pressure), 10-20SLM(flow)

CDA : Pressure : 4-6 Kg/cm2, Flow : 400 SLM

Exhaust : Flow > 300 SLM, Temperature < 70 C (3'' Piping)

More information available on request.