The RTP-781SA system is 8'' Semi - automatic machine. The chamber design, which is different from the previous model chamber, supports the vacuum function with a Halogen lamps as the heating source. The operator put the wafer to be processed into the chamber manually, and then set the process conditions. The rapid heating and cooling processes can be accurate to complete. The machine controller under PC-based and Windows system as the man-machine interface can be provided the operator easy to understand the operation method.
Application:
●Implant Annealing / Activation
●Metal Alloy, GaAs Contact Alloy
●PSG/BPSG Reflow
●Trench Oxidation
●Gate Dielectric Formation
●Poly–Si Annealing
●Ti Silicide / Salicide / Nitride
Specifications
●Wafer Size:2”~ 8”
●Temperature Range:RT ~ 1250℃
●Temperature Ramp Up Rate: ≦100℃/sec (Bare Wafer)
●Temperature Uniformity: ±1%
●Process chamber oxygen content:≧2ppm
●Process Pressure: 10m Torr ~ 1 atm (Option)
Machine size : W90cm xL160cm xH200cm
Weight : 360 Kg
Facility Electricity : 380V-125A 3P / 5W (R,S,T,N,G) 50/60Hz
Cooling water (inlet) : 18-25 C (temperature), 3-5Kg/cm2(pressure), 10-20SLM(flow)
CDA : Pressure : 4-6 Kg/cm2, Flow : 120-150 SLM
Exhaust : Flow > 300 SLM, Temperature < 70 C
More information available on request.