MOCVD (FEOL) Equipment / Reactors / RealFaith Semiconductor BDS-72X2'' -GaN MOCVD

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High Temperature and High Growth Rate MOCVD Equipment

Model : BDS72X2'' GaN MOCVD

1.Working temperature : Highest topside temperature of graphite disk is over 1300

2.High temperature uniformity : Temperature difference between three zones is less than 1

3.High reliability : Able to greatly restrain deformation of heater at high temperature by using all metal construction, and improve the lifetime and repeatability of heater.

 

Applications:

1.Semiconductor electronic devices

2.UV-LED