MOCVD (FEOL) Equipment / Reactors / Aixtron 2800G4 ICHT GaAs/InP based MOCVD system

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  • 1011200

Aixtron 2800G4 ICHT 11x4'' GaN , 2010 model converted to GaAs or InP based MOCVD system w/EpiTT and EpiCurve.

 

Hydride Lines - AsH3_1 - 500/500, AsH3_2 - 500/500 , PH3_2 - 5000/500, SiH4 with DD 100/1000/100

 

Gas Distribution system confirgured as follows:

MO 1 - TMGa_1, 200/500 / MO 2 - TMGa_2, 50/500

MO 3 - TMAl, 500/500 / MO 4 - TMAl, 200/500

MO 5 - TMIn, 1000/500 / MO 6 - TMIn _1, 1000/500

MO 8 - TEGa _1, 1000/500

MO 9 - DMZn_1, 1000/200

MO 10 - CBr4_1, 1000/500 

 

Equipped with (5) RM 6S and (1) RM 25Sthermal baths

 

More information available on request.